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×Fullerton, California
Novel nanoelectronic devices. CAD analysis of nanoelectronic devices, advanced MOSFETs-SOI, FinFETs, SiGe, carbon nanotubes and ribbons, nanowires, quantum devices: RTD, tunnel FET, qubits; nanomemory, DRAM, flash, M/F RAM, spin torque devices
Units: 3.0